Spectroscopy and Optoelectronics in Semiconductors and Related Materials

Proceedings of the Sino-Soviet Seminar

Sino-Soviet Seminar on Spectroscopy and Optoelectronics in Semiconductors and Related Materials

, Shanghai, China

, 27 – 31 May 1990

https://doi.org/10.1142/1228 | November 1990

Pages: 440

Edited by:
S C Shen (Academia Sinica, Shanghai, China),
J H Chu (Academia Sinica, Shanghai, China),
Z P Wang (Academia Sinica, Shanghai, China),
J Q Yu (Academia Sinica, Shanghai, China), and
G Y Zhang (Academia Sinica, Shanghai, China)

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ISBN: 978-981-4569-68-2 (ebook) USD 70.00 Add to cart

This proceedings volume covers new results from recent studies on impurity states, bound states in semiconductors, phonons, excitons and electron confinement in superlattices and quantum wells, magnetooptics, optical properties of solids in far infrared and millimeter wave regions, optical nonlinearity for III-V, II-VI compounds, Si, Ge, amorphous and organic semiconductors as well as optical crystals. Special emphasis is placed on the 2DEG system.

Contents:

Far Infrared Laser on p-Ge (J Pozhela)
Modulation Spectroscopy of Superlattices and Quantum Well Structures (A Shileika)
Magnetospectroscopy in Fractional Quantum Hall Regime (I V Kukushkin &V B Timofeev)
Photothermal Ionization Spectroscopy for Shallow Donors in GaAs (V Ivanov-Omskii)
Surface Electromagnetic Waves (SEW) Application for Studies of Optical Properties of Very Thin Film on Solid (G N Zhizhin et al.)
Photothermal Ionization Spectroscopy for Shallow Impurities in Ultra-pure Silicon (S C Shen et al.)
Recent Advances in Theory of Optical Phonon Raman Scattering in Quantum Well System (B-F Zhu et al.)
Optical Nonlinearity in Semiconducting Polymers (X Sun et al.)
Characterization of Germanium-Silicon Strained-Layer Superlattices by Raman Scattering (X Wang et al.)
The Infrared Investigation on Oxygen-Related Local Vibrational Modes in GaAs (D-S Jiang et al.)
Optical Phonon Modes in GaAs/AIAs and GaAs/AIGaAs Superlattices (Z-P Wang et al.)
and other papers

Readership: Semiconductor physicists, spectroscopists and condensed matter physicists.

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Spectroscopy and Optoelectronics in Semiconductors and Related Materials: Proceedings of the Sino-Soviet Seminar

Pages:1–442

https://doi.org/10.1142/9789814539784

Preview Abstract

The Table of Contents for the book is as follows:

Committees and Sponsors
Group photograph of seminar participants
Foreword
Invited Papers
- Magnetospectroscopy in Fractional Quantum Hall Regime
- Recent Advances in Theory of Optical Phonon Raman Scattering in Quantum Well Systems
- Modulation Spectroscopy of Superlattices and Quantum Well Structures
- Characterization of Germanium-Silicon Strained-Layer Superlattices by Raman Scattering
- Far-Infrared Laser on p-Ge
- Photothermal Ionization Spectroscopy for Shallow Impurities in Ultra-pure Silicon
- Photothermal Ionization Spectroscopy of Shallow Donors in GaAs
- Controlling the Physical Properties of Semiconductors by Isovalent Impurity Doping
- Optical Properties of Si/SiO₂ Superlattices
- Optical Phonon Modes in GaAs/AlAs and GaAs/AlGaAs Superlattices
- Photoexcited Hot Electrons, Excitons and Phonons in Semiconductor Crystals and Superlattices
- Excitonic Emission and Absorption of ZnSe–ZnS Strained Layer Superlattices
- Intersubband Transitions in Strained In_xGa_1–xAs/GaAs Multiple Quantum Wells as Functions of Temperature and Pressure
- The Infrared Investigations on Oxygen-Related Local Vibrational Modes in GaAs
- Magneto-Optical Properties of Inversion Layer Subband on p-Hg_1–xCd_xTe
- MOCVD Growth and Characterization of 2 ∼ 4μ m Optoelectronic Materials
- Energy Band and Optical Gap of Organic Semiconductor
- Optical Nonlinearity of Semiconductor Doped Glass (SDG)
- Spectroscopic Studies of Semiconducting Polymer Poly (3-Methyl Thiophene)
- Photoreflectance of GaAs at Room Temperature — Doping Dependence and Pump Intensity Dependence
- Transient Optics and Photoconductivity of Semiconducting Compounds
Contributed Papers
- Properties of Infrared Intersubband Transition in Doped GaAs/AlGaAs Multiple Quantum Wells
- Electronic Structures of GaAs/AlAs Short Period Superlattices Investigated by Photoluminescence under Hydrostatic Pressure
- Photoluminescence Studies of In_xGa_1–xAs/GaAs Strained Quantum Wells under Hydrostatic Pressure
- Donor–Acceptor Pair Luminescence in Undoped ZnSe–ZnS Strained Layer Superlattices
- CdTe–ZnTe Multiquantum-Wells Grown by Atomic Layer Epitaxy on (001) GaAs Substrate
- Raman Scattering Characterisation of ZnSe Film Grown on GaAs(100) by Hot Wall Epitaxy
- The Unique Behavior of Plasmon Absorption in Semiconductors with Linear Band
- The Crystal Growth and Optical Characterisation of Semimagnetic Semiconductor Zn_1–xMn_xSe
- Optical Spectroscopy of Amorphous Hydrogenated Carbon and Pure Carbon Films
- Absorption and Luminescence Spectra of Bi₄Ge₃O₁₂:TR,Cr,Fe (TR = Nd, Er, Ce, Eu, Pr) Crystals
- The Evidence of V + nH(n = 1 – 4) Complexes in NTD FZ-Si(H) System
- The Study of Luminescence Characteristics of Er³⁺ Ion in ZnS Electroluminescence Thin Film
- Fractional Calculus Analysis of Interband Transitions and Fractional Derivative Spectra of Ion-Implanted Si
- Photoluminescence Studies in CdTe and CdZnTe
- A New Emission Line in Highly Excited ZnSe
- Quantum Transport Behavior of Hg_1–xCd_xTe in Magnetic Quantum Limit
- Self-Defocusing and Optical Limiting Effect in HgCdTe at 10.6μ m
- Dependence of Interchain Coupling on Interchain Energy Transfer in One-dimensional Conducting Polymers
- The Optical Study of Doped and Undoped Polyparaphenylene Film
- The Origin of Persistent Photoconductivity in Compositional-Modulated a-Si:H Multilayers
- Optical Nonlinear Absorption in Colloidal CDS Quantum Dots
- Dispersion of Nonlinear Optical Susceptibility of GaAs/AlGaAs Multiple Quantum Wells in the Exciton Region
- Optical Nonlinearity in Semiconducting Polymers
- Impurity-Related Absorptive Optical Nonlinearity and Bistability in ZnMnSe:Mn
- Surface Electromagnetic Waves (SEW) Application for Studies of Optical Properties of Very Thin Films on Solids
List of participants