New Frontiers in Surface and Interface Science and Technology

Handbook of Molecular Beam Epitaxy of Oxide Materials

Volume 1: Molecular Beam Epitaxy of Oxides

https://doi.org/10.1142/14109-vol1 | July 2025

Pages: 250

By (author):
Charles Ahn (Yale University, USA),
Scott Chambers (Pacific Northwest National Laboratory, USA),
Alexander A Demkov (The University of Texas at Austin, USA),
John Ekerdt (The University of Texas at Austin, USA),
Bharat Jalan (University of Minnesota, USA),
Lior Kornblum (Technion - Israel Institute of Technology, Israel),
Joseph Ngai (The University of Texas at Arlington, USA),
Agham Posadas (The University of Texas at Austin, USA), and
Fred Walker (Yale University, USA)

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This volume is part of a reference set. To view or order the whole set, please visit the main page.

This set of books provide a detailed introduction to molecular beam epitaxy (MBE) of Oxides and modern characterization techniques used to analyze thin oxide films. A reprint volume containing seminal papers in the filed allows the reader to experience the excitement of discovery first hand in the voices of people who made those discoveries. MBE revolutionized the semiconductor technology, but its introduction to oxide growth has been delayed, owing to a complex set of reasons that range from practical difficulties (chemically aggressive environment and high temperature) to fundamental differences from semiconductors (reactive growth). It aims to be a useful reference to an expert as well as a guide to a graduate student.

Contents:

Preface
An Introduction to Oxide Molecular Beam Epitaxy (Scott Chambers)
Basics of Oxide Molecular Beam Epitaxy (Alex Demkov)
MBE Technology (Charles Ahn and Fred Walker)
Binary Oxides (Agham Posadas)
Complex Ternary Oxides (Joseph Ngai)
Epitaxial Complex Oxide Growth on Semiconductors (Lior Kornblum, Bharat Jalan, and Charles Ahn)
Other Deposition Methods (John Ekerdt and Agham Posadas)

Readership: It aims to be a useful reference to an expert as well as a guide to a graduate student in the field of molecular beam epitaxy (MBE) of oxides, and modern characterization techniques used to analyze thin oxide films.