Handbook Series on Semiconductor Parameters

The following sections are included:

• PREFACE

• CONTENTS

The following sections are included:

• Basic Parameters at 300 K

• Band Structure and Carrier Concentration
  • Temperature Dependences
  • Dependences on Hydrostatic Pressure
  • Energy Gap Narrowing at High Doping Levels
  • Band Discontinuities at Al_xGa_1−xAs/GaAs Heterointerface
  • Effective Masses
  • Donors and Acceptors

• Electrical Properties
  • Mobility and Hall Effect
  • Two-Dimensional Electron and Hole Gas Mobility at Al_xGa_1−xAs/GaAs Interface
  • Transport Properties in High Electric Field
  • Transport Properties of Electron and Hole Two-Dimensional Gas in High Electric Field
  • Impact Ionization
  • Recombination Parameters

• Optical Properties

• Thermal Properties

• Mechanical Properties, Elastic Constants, Lattice Vibrations, Other Properties

• References

The following sections are included:

• Basic Parameters at 300 K

• Band Structure and Carrier Concentration
  • Temperature Dependences
  • Dependences on Hydrostatic Pressure
  • Energy Gap Narrowing at High Doping Levels
  • Band Discontinuities at Heterointerfaces
  • Effective Masses
  • Donors and Acceptors

• Electrical Properties
  • Mobility and Hall Effect
  • Two-Dimensional Electron Gas Mobility at Ga_0.5lIn_0.49P/GaAs Interface (after Chan et al. [1989])
  • Transport Properties in High Electric Fields
  • Impact Ionization
  • Recombination Parameters

• Optical Properties

• Thermal Properties

• Mechanical Properties, Elastic Constants, Lattice Vibrations, Other Properties

• References

The following sections are included:

• Basic Parameters at 300 K

• Band Structure and Carrier Concentration
  • Temperature Dependences
  • Dependences on Hydrostatic Pressure
  • Energy Gap Narrowing at High Doping Levels
  • Band Discontinuities at Heterointerfaces
  • Effective Masses
  • Donors and Acceptors

• Electrical Properties
  • Mobility and Hall Effect
  • Two-Dimensional Electron and Hole Gas Mobility in Heterostructures
  • Transport Properties in High Electric Field
  • Impact Ionization
  • Recombination Parameters

• Optical Properties

• Thermal Properties

• Mechanical Properties, Elastic Constants, Lattice Vibrations, Other Properties

• References

The following sections are included:

• Basic Parameters at 300 K

• Band Structure and Carrier Concentration
  • Temperature Dependences
  • Dependences on Hydrostatic Pressure (After Zitouni et al. [1986])
  • Effective Masses
  • Donors and Acceptors

• Electrical Properties
  • Mobility and Hall Effect
  • Transport Properties in High Electric Field
  • Recombination Parameters

• Optical Properties

• Thermal Properties

• Mechanical Properties, Elastic Constants, Lattice Vibrations, Other Properties

• References

The following sections are included:

• Basic Parameters at 300 K

• Band Structure and Carrier Concentration
  • Temperature Dependences
  • Dependences on Hydrostatic Pressure
  • Effective Masses
  • Donors and Acceptors

• Electrical Properties
  • Mobility and Hall Effect
  • Impact Ionization

• Optical Properties

• Thermal Properties

• Mechanical Properties, Elastic Constants, Lattice Vibrations, Other Properties

• References

The following sections are included:

• Basic Parameters at 300 K

• Band Structure and Carrier Concentration
  • Temperature Dependences
  • Dependences on Hydrostatic Pressure
  • Effective Masses
  • Donors and Acceptors

• Electrical Properties
  • Mobility and Hall Effect
  • Impact Ionization
  • Recombination Parameters

• Optical Properties

• Thermal Properties

• Mechanical Properties, Elastic Constants, Lattice Vibrations, Other Properties

• References

The following sections are included:

• Basic Parameters at 300 K
  • Basic Properties of Ga_xIn_1−xAS_yP_1−y Compositions Lattice-Matched to InP at 300 K(x≅0.47y)

• Band Structure and Carrier Concentration
  • Temperature Dependences
  • Dependence on Hydrostatic Pressure
  • Band Discontinuities at GaInAsP/InP Heterostructure
  • Effective Masses
  • Donors and Acceptors

• Electrical Properties
  • Mobility and Hall Effect
  • Transport Properties in High Electric Field
  • Impact Ionization
  • Recombination Parameters

• Optical Properties

• Thermal Properties

• Mechanical Properties, Elastic Constants, Lattice Vibrations, Other Properties

• References

The following sections are included:

• Basic Parameters at 300 K
  • Basic Properties of Ga_xIn_1−xAS_ySb_1−y Compositions Lattice-Matched to GaSb
  • Basic Properties of Ga_xIn_1−xAS_ySb_1−y Compositions Lattice-Matched to InAs

• Band Structure and Carrier Concentration
  • Temperature Dependences
  • Band Discontinuities at GaInAsSb/GaSb and GaInAsSb/InAs Heterojunctions
  • Effective Masses
  • Donors and Acceptors

• Electrical Properties
  • Mobility and Hall Effect
  • Impact Ionization

• Optical Properties

• Thermal Properties

• Mechanical Properties, Elastic Constants, Lattice Vibrations, Other Properties

• References