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ETCHED APERTURE GaN CAVET THROUGH PHOTOELECTROCHEMICAL WET ETCHING

Department of Materials and of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106-5050, USA

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ILAN BEN-YAACOV

Department of Materials and of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106-5050, USA

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UMESH MISHRA

Department of Materials and of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106-5050, USA

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, and

EVELYN HU

Department of Materials and of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106-5050, USA

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https://doi.org/10.1142/9789812562364_0013Cited by:0 (Source: Crossref)

Abstract:

We describe the fabrication of the CAVET (Current Aperture Vertical Electron Transistor) by Photoelectrochemical (PEC) formation of a current aperture. Etch process is quite naturally critical to the achievement of the etched aperture in CAVET. We provide some background on that etch process, and the subsequent modification and optimization of the process for CAVET fabrication.

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ETCHED APERTURE GaN CAVET THROUGH PHOTOELECTROCHEMICAL WET ETCHING

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