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MID-INFRARED GaSb-BASED LASERS WITH TYPE-I HETEROINTERFACES

    https://doi.org/10.1142/9789812775542_0004Cited by:0 (Source: Crossref)
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    Abstract:

    The design of room-temperature, InGaAsSb/AlGaAsSb diode lasers has evolved from the first double-heterojunction lasers described in 1980 that operated in the pulsed-current mode to presentday continuous-wave (CW), high-power, quantum-well diode lasers. We discuss in detail recent results from type-I-heterostructure, GaSb-based CW room-temperature diode lasers. The devices operate within the wavelength range of 1.8 to 2.7 μm, providing output powers up to several Watts. We analyze the factors limiting device performance.