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DEVELOPMENT OF TI BASED TRANSITION EDGE SENSORS FOR CRYOGENIC DETECTORS

    https://doi.org/10.1142/9789812776464_0096Cited by:2 (Source: Crossref)
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    Abstract:

    Ti based TES (Transition Edge Sensor) both of the single layer type and bilayers have been produced with critical temperatures ranging between 140 and 390 mK. Gain up to 400 have been obtained. A possible application of TES as temperature reference point is examined.