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POWER METAL–OXIDE–SEMICONDUCTOR FIELD-EFFECT TRANSISTOR

      https://doi.org/10.1142/9789812791016_0004Cited by:0 (Source: Crossref)
      Abstract:

      The following sections are included:

      • Introduction

      • Basic MOS Physics

        • Flat-band State

        • Accumulation State

        • Depletion State

        • Inversion State

        • MOS Capacitance

        • Threshold Voltage

      • Static Characteristics

        • Linear Region Operation

        • Saturation Region Operation

        • Mobility Degradation

        • Forward Blocking

      • Switching Characteristics

        • Turn-on Transient

        • Turn-off Transient

        • Gate Charge

        • High-frequency Operation

        • Parasitic Body Diode

      • dv/dt Limit

      • Dummy-Gated Structure

      • Folded Gate Structure

      • Lateral Radio Frequency (RF) Power MOSFET

        • Graded Gate

        • Stepped Lateral Double Diffusion

        • Partial Silicon -on-Insulator Platform

        • Partial SOI Platform Formation

      • Parallel and Series Operations

      • Gate Drive Circuits

      • References