LOW FREQUENCY NOISE CONVERSION IN FETs UNDER NONLINEAR OPERATION

The conversion mechanisms of microscopic low frequency noise sources (e.g. generation-recombination noise sources) located in the channel of a FET (Field Effect Transistor), in the presence of a large RF signal, are investigated. It is shown that the base-band (low frequency) input gate noise voltage spectral density is strongly dependent on the magnitude of the input RF power applied to the FET. Moreover, the microscopic generation-recombination noise sources distributed along the channel are also responsible of up-converted input gate noise voltage spectral density around the RF frequency.