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MODFETs: OPERATION, STATUS AND APPLICATIONS

    https://doi.org/10.1142/9789812830821_0002Cited by:1 (Source: Crossref)
    Abstract:

    The following sections are included:

    • Introduction

    • Qualitative Description of MODFET Operation

    • Analytical Description of MODFETs

    • Fabrication Process

      • Gate formation

        • T-shaped gate

        • Multifinger gate

        • Dual gate

        • Offset recessed gate

        • Double recessed gate

      • Alloyed ohmic contacts

        • Primer

        • AuGe/Ni metallization for alloyed ohmic contact

        • AuGe/Au metallization for alloyed ohmic contact

        • AuGe/Ni/Au metallization for alloyed ohmic contact

        • Au/Ge/Ni/Ag metallization for alloyed ohmic contact

        • Ni/Ge/Au/Ni/Au metallization for alloyed ohmic contact

      • Non-alloyed ohmic contact

        • WSi metallization

      • Regrown ohmic contacts

      • Channel improvement

        • Synopsis

        • Strained layer channel

        • Striped channel

        • Delta (or lamella) doped channel

        • Superlattice-based channel

    • Reliability

      • Synopsis

      • Degradation of ohmic contacts

      • Effect of temperature stress

      • Influence of defects and dislocations

      • Effect of transient radiation

    • Applications

      • Monolithic microwave integrated circuits (MMICs)

        • Low-noise amplifiers

        • Power performance

    • Conclusion

    • Acknowledgements

    • References