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Growth of Heterojunction Bipolar Transistors from Molecular Beams
https://doi.org/10.1142/9789812831675_0002Cited by:0 (Source: Crossref)
Abstract:
The following sections are included:
Introduction
GaAs-Based HBTs
HBT Structures
Growth of the Base
Growth of the Emitter
Growth of the Collector and Subcollector
Npn Device Results
Uses of Selective Epitaxial Growth
Pnp HBTs
Growth of InP Device Structures
HBT Structures
Growth of the Base and the Emitter
Npn Device Results
Uses of Selective Growth
Conclusions
References
