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GALLIUM PHOSPHIDE (Gap)
https://doi.org/10.1142/9789812832078_0005Cited by:11 (Source: Crossref)
Abstract:
The following sections are included:
Basic Parameters at 300 K
Band Structure and Carrier Concentration
Temperature Dependences
Dependences on Hydrostatic Pressure (Ves et al. [1985])
Energy Gap Narrowing at High Doping Levels
Effective Masses
Donors and Acceptors
Electrical Properties
Mobility and Hall Effect
Transport Properties in High Electric Field
Impact Ionization
Recombination Parameters
Optical Properties
Thermal Properties
Mechanical Properties, Elastic Constants, Lattice Vibrations, Other Properties
References
