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Displacement Damage in Compound Semiconductors
https://doi.org/10.1142/9789814277112_0010Cited by:0 (Source: Crossref)
Abstract:
The following sections are included:
JFETs
HFETs
Advanced Bipolar Transistors
Wide-Bandgap Devices
Silicon carbide
SiC MOSFETs
Schottky barrier diodes
Gallium nitride
Summary
References
