No Access
HIGH-PERFORMANCE 50-NM METAMORPHIC HIGH ELECTRON-MOBILITY TRANSISTORS WITH HIGH BREAKDOWN VOLTAGES
https://doi.org/10.1142/9789814287876_0012Cited by:0 (Source: Crossref)
Abstract:
This paper reports a successful improvement of the low breakdown voltages in short gate-length metamorphic high electron-mobility transistors. The technical approach includes both the optimization of the epitaxial layer design and the selection of the proper gate recess scheme. By employing a novel epitaxial design (including a high indium composite channel and the double-sided doping) and an asymmetric gate recess, both the off-state and on-state breakdown voltages have been improved for 50-nm high-performance metamorphic high electron-mobility transistors. The results reported herein demonstrate that these devices are excellent candidates for ultra-high-frequency power applications.
