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Lecture 19: VS Characterization of Transport in Nanotransistors
https://doi.org/10.1142/9789814571746_0019Cited by:0 (Source: Crossref)
Abstract:
The following sections are included:
Introduction
Review of the MVS/Transmission model
ETSOI MOSFETs and III-V HEMTs
Fitting the MVS model to measured IV data
MVS analysis: Si MOSFETs and III-V HEMTs
Linear region analysis
Saturation region analysis
Linear to saturation region analysis
Discussion
Summary
References
