DETERMINATION OF INDIUM CONCENTRATION IN SEMICONDUCTOR OF GaAs BY PIXE

Concentration of In impurity doped in GaAs semiconductor was determined by PIXE method non-destructively using a plate target. The concentration of In in the range from 0.05 to 1 wt.% in GaAs crystals is given from PIXE peak intensities by [In] (wt.%)=(0.39±0.06)×In Kα/ (Ga Kβ+As Kα).