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SILICON CARBIDE STATIC INDUCTION TRANSISTORS
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B. Bose , Evaluation of modern power semiconductor devices and future trend of converters, IEEE Industry Appl. Soc. Annual Mtg. (1989) p. 790, DOI: 10.1109/IAS.1989.96737. Google Scholar- B. Bose, IEEE Trans. Power Electronics 7(2), 2 (1992), DOI: 10.1109/63.124572. Crossref, Web of Science, Google Scholar
- B. Bose, IEEE Trans. Industry Appl. 28, 403 (1982), DOI: 10.1109/28.126749. Crossref, Web of Science, Google Scholar
R. Clarke et al., 30 W VHF 6H-SiC power static induction transistor, Proc. High Speed Semicon. Dev. and Circuits (Cornell Conf.) (1995) p. 47, DOI: 10.1109/CORNEL.1995.482419. Google Scholar-
K. Spangenberg , Vacuum Tubes (McGraw-Hill, New York, NY, 1948) pp. 201–237. Google Scholar -
E. Chaffee , Theory of Thermionic Vacuum Tubes (McGraw–Hill, New York, NY, 1933) pp. 144–191. Google Scholar -
K. Spangenberg , Vacuum Tubes (McGraw–Hill, New York, NY, 1948) pp. 266–297. Google Scholar -
E. Chaffee , Theory of Thermionic Vacuum Tubes (McGraw–Hill, New York, NY, 1933) pp. 588–621. Google Scholar M. Grecki and A. Napieralski , Two dimensional analysis of SIT (static induction transistor) during switching process, 5th European Conf. Power Electron. and Appl. (1993) p. 95. Google ScholarH. Takagi et al., High voltage bipolar mode SIT with low power loss, 5th Intl. Symp. Power Semicon. Dev. and ICs (1993) p. 276, DOI: 10.1109/ISPSD.1993.297137. Google ScholarM. Tatsuta , E. Yamanaka and J. Nishizawa , High frequency, high power static induction transistor, IEEE Industry Appl. Soc. Annual Mtg. (1993) p. 1321. Google ScholarA. Napieralski and M. Grecki , Transient temperature evaluation during switching process in static induction transistor, Power Electronics and Variable Speed Drive Conf. (1994) p. 537. Google ScholarH. Ogiwara and M. Nakaoka , Zero current soft switching mode parallel load resonant tank high frequency inverter using normally-off bipolar mode SIT, Power Electron. Spec. Conf. (PESC) (1994) p. 95, DOI: 10.1109/PESC.1994.349744. Google ScholarK. Yamamoto , T. Sugai and K. Tanaka , A compact, high efficiency, high power DC/DC converter, Telecommunications Energy Conf. (INTELEC) (1993) p. 251. Google ScholarA. Okuno et al., Phase-lock loop operated load-resonance inverter using static induction power transistors and its practical characteristic evaluations, Intl. Conf. Industrial Automation and Control (1995) p. 1, DOI: 10.1109/IACET.1995.527531. Google ScholarH. Ogiwara , S. Haq and M. Nakaoka , High efficiency zero current soft switching mode high frequency inverter using normally-off bipolar mode SIT for induction heating, Intl. Conf. Power Electronics, Drives, Energy Syst., for Industrial Growth (1996) p. 801, DOI: 10.1109/PEDES.1996.536376. Google ScholarT. Iwasaki et al., Electrical characteristics of a novel gate structure 4H-SiC power static induction transistor, IEEE Intl. Symp. Power Semicon. Dev. and ICs (1997) p. 149, DOI: 10.1109/ISPSD.1997.601457. Google Scholar- A. Okunoet al., IEEE Trans. Industry Appl. 34, 713 (1998), DOI: 10.1109/28.703962. Crossref, Web of Science, Google Scholar
A. Okuno , S. Shirakawa and M. Nakaoka , Latest developments of voltage-fed resonant high frequency inverter with load resonant frequency tracking scheme for induction heating, Power Electronics and Variable Speed Drives Conf. (1998) p. 152. Google Scholar- Y. Watanabe and J. Nishizawa, Semiconductor Devices Including High Resistive Layer, Japanese Patent 205,068 Dec 1950 . Google Scholar
- J. Nishizawa, T. Terasaki and J. Shibata, IEEE Trans. Electron Devices 22, 185 (1975). Crossref, Web of Science, Google Scholar
-
K. Ng , Complete guide to semiconductor devices (J. Wiley and Sons, 2002) pp. 225–233. Google Scholar J. Nishizawa , A low impedance field effect transistor, Intl. Electron Dev. Mtg. (IEDM) (1972) p. 144. Google Scholar- J. Nishizawa, T. Terasaki and J. Shibata, IEEE Trans. Electron Dev. 22, 185 (1975). Crossref, Web of Science, Google Scholar
- H. Ogawaet al., Electron. Lett. 11, 223 (1975). Crossref, Web of Science, Google Scholar
- K. Yamaguchi, T. Toyabe and H. Kodera, IEEE Trans. Electron Dev. 22, 1047 (1975). Crossref, Web of Science, Google Scholar
- Y. Mochida, J. Nishizawa and T. Ohmi, IEEE Trans. Electron Dev. 25, 761 (1978). Crossref, Web of Science, Google Scholar
- T. Tamamushi, T. Akiyama and J. Nishizawa, IEEE Trans. Electron Dev. 35, 1130 (1988), DOI: 10.1109/16.3374. Crossref, Web of Science, Google Scholar
R. Siergiej et al., High power 4H-SiC static induction transistors, Intl. Electron Dev. Mtg. (IEDM) (1995) p. 353, DOI: 10.1109/IEDM.1995.499213. Google Scholar- W. Shockley, Proc. IRE 40, 1289 (1952). Crossref, Google Scholar
P. Hadizad et al., High speed static induction transistor for pulsed power applications, IEEE 19th Intl. Power Modulator Symp. (1990) p. 343, DOI: 10.1109/MODSYM.1990.200988. Google ScholarM. Mori and T. Yatsuo , A high voltage GaAs power static induction transistor, Proc. 19th Conf. Solid State Dev. And Matl. (1987) p. 279. Google Scholar-
P. Hadizad et al. , Design of an opening and closing GaAs static induction transistor for pulsed power applications , Proc. 7th IEEE Pulsed Power Conf. ( 1989 ) . Google Scholar - P. Hadizadet al., IEEE Electron Dev. Lett. 14, 190 (1983), DOI: 10.1109/55.215154. Crossref, Web of Science, Google Scholar
- J. Nishizawa, P. Plotka and T. Kurabayashi, IEE Proc. Circuits Dev. Syst. 146, 27 (1999), DOI: 10.1049/ip-cds:19990274. Crossref, Web of Science, Google Scholar
- J. Nishizawa, P. Plotka and T. Kurabayashi, IEEE Trans. Electron Dev. 49, 1102 (2002), DOI: 10.1109/TED.2002.1013263. Crossref, Web of Science, Google Scholar
X. Gu et al., GaAs and Si FET-type switches for repetitive pulsed power applications, IEEE 25th Intl. Power Modulator Symp. (2002) p. 437. Google Scholar- J. Nishizawa, K. Motoya and A. Itoh, IEEE Trans. Electron Dev. 47, 482 (2000), DOI: 10.1109/16.822297. Crossref, Web of Science, Google Scholar
- T. Mizoguchiet al., IEEE Trans. Electron Dev. 38, 1021 (1991), DOI: 10.1109/16.78374. Crossref, Web of Science, Google Scholar
C. Brandt et al., SiC temperature tolerant power electronics for dual use systems applications, Proc. Intersoc. Energy Conv. Engr. Conf. (IECEC) (1997) p. 705. Google Scholar- C. Davis, J. Hawkins and C. Einolf, IEEE Trans. Broadcasting 43, 252 (1997), DOI: 10.1109/11.632898. Crossref, Web of Science, Google Scholar
- R. Clarke and J. Palmour, Proc. IEEE 90, 987 (2002), DOI: 10.1109/JPROC.2002.1021563. Crossref, Web of Science, Google Scholar
M. Driver et al., Advances in SiC device processing and substrate fabrication for high power microwave and high temperature electronics, GaAs IC Symp. (1993) p. 19. Google Scholar- C. Weitzelet al., IEEE Trans. Electron Dev. 43, 1732 (1996), DOI: 10.1109/16.536819. Crossref, Web of Science, Google Scholar
A. Morse et al., Application of high power SiC transistors at radar frequencies, IEEE Intl. Microwave Symp. (MTT-S) (1996) p. 677, DOI: 10.1109/MWSYM.1996.511030. Google ScholarR. Clarke et al., The mixed mode 4H-SiC SIT as an S-band microwave power transistor, IEEE 54th Dev. Res. Conf. (1996) p. 62, DOI: 10.1109/DRC.1996.546316. Google ScholarT. Knight et al., A SiC self-aligned and ion implanted static induction transistor (SAI-SIT) for 150 Watt S-band operation, IEEE 60th Dev. Res. Conf. (2002) p. 179, DOI: 10.1109/DRC.2002.1029586. Google ScholarP. Esker et al., Ion Implanted SiC Static Induction Transistor with 107 W Output Power and 59% Power Added Efficiency under CW Operation at 750 MHz, IEEE Proc. Lester Eastman Conf. High Performance Dev. (2004) p. 52, DOI: 10.1109/LECHPD.2004.1549707. Google ScholarJ. Fuerherm , Y. Zeng and M. White , A study of interface charges on the operation of 4H-SiC static induction transistors, Intl. Semicon. Dev. Res. Symp. (2003) p. 134, DOI: 10.1109/ISDRS.2003.1272030. Google ScholarR. Bojko et al., Recent progress in 4H-SiC static induction transistors for high frequency power generation, IEEE Dev. Res. Conf. (1998) p. 96, DOI: 10.1109/DRC.1998.731137. Google Scholar- K. Yanoet al., IEEE Trans. Electron Dev. 40, 2092 (1993), DOI: 10.1109/16.239755. Crossref, Web of Science, Google Scholar
- C. Bulucea and A. Rusu, Solid State Electron. 30, 1227 (1987), DOI: 10.1016/0038-1101(87)90046-3. Crossref, Web of Science, Google Scholar
- K. Yanoet al., IEEE Trans. Electron Dev. 39, 1257 (1992), DOI: 10.1109/16.129121. Crossref, Web of Science, Google Scholar
S. Ortolland and C. Johnson , 4H-SiC SIT device for heating applications, IEE Colloq. Adv. Semicon. Dev. (1999) p. 2/1. Google ScholarS. Li , R. Liu and S. Liu , Control on the characteristics of the static induction transistor (SIT), 4th Intl. Conf. Solid State and Integrated Circuit Technol. (1995) p. 473, DOI: 10.1109/ICSICT.1995.500244. Google ScholarC. Weitzel , Wide Bandgap semiconductor power electronics, Intl. Electron Dev. Mtg. (IEDM) (1998) p. 51, DOI: 10.1109/IEDM.1998.746244. Google Scholar-
G. Harris (ed.), Properties of Silicon Carbide (INSPEC, London, UK, 1995) pp. 153–156. Google Scholar H. Onose et al., Design consideration for 2 kV SiC SIT, Proc. Intl. Symp. Power Semicon. Dev. and ICs (2001) p. 179, DOI: 10.1109/ISPSD.2001.934584. Google ScholarH. Onose et al., Switching properties of 2 kV SiC SIT, Proc. 14th Intl. Symp. Power Semicon. Dev. and ICs (2002) p. 189, DOI: 10.1109/ISPSD.2002.1016203. Google Scholar- R. Clarke, private communication (2003) . Google Scholar
A. Agarwal et al., Ion implanted static induction transistors in 4H-SiC, IEEE 56th Dev. Res. Conf. (1998) p. 94, DOI: 10.1109/DRC.1998.731136. Google ScholarV. Sankin and P. Shkrebiy , 4H and 6H-SiC vertical static induction transistor with p-n junction as a gate, Intl. Semicon. Dev. Res. Symp. (2001) p. 579, DOI: 10.1109/ISDRS.2001.984584. Google ScholarM. Tatsuta et al., 1 MHz, 1 kW series resonant converter for ultrasonic transducer using the high frequency power SITs, Power Electron. Spec. Conf. (PESC) (1988) p. 1236, DOI: 10.1109/PESC.1988.18267. Google Scholar- M. Haneset al., IEEE Trans. Nuclear Sci. 35, 1475 (1988), DOI: 10.1109/23.25483. Crossref, Web of Science, Google Scholar
- A. Strollo and P. Spirito, IEEE Trans. Electron Dev. 38, 1943 (1991), DOI: 10.1109/16.119037. Crossref, Web of Science, Google Scholar
T. Yamaguchi et al., Development of high power medium wave radio transmitter with SIT, Intl. Broadcasting Convention (IBC) (1992) p. 29. Google ScholarK. Nuttall and W. Chen , An optically activated SIT for high voltage applications, 5th European Conf. Power Electronics and Appl. (1993) p. 283. Google Scholar- J. Nishizawa and K. Yamamoto, IEEE Trans. Electron Dev. 25, 314 (1978). Crossref, Web of Science, Google Scholar
S. Aoki et al., Low loss high gain 300 V–200 A Class normally-off SIT module for DC motor control, Power Electron. Spec. Conf. (PESC) (1988) p. 703, DOI: 10.1109/PESC.1988.18199. Google Scholar-
B. Streetman , Solid State Electronic Devices, 2nd edn. (Prentice–Hall, Englewood Cliffs, NJ, 1980) pp. 286–293. Google Scholar - K. Yamaguchi and H. Kodera, IEEE Trans. Electron Dev. 24, 1061 (1977). Crossref, Web of Science, Google Scholar
R. Singh and B. Baliga , Cryogenic operation of static induction (SIT/SITh) devices, Proc. Intl. Symp. Power Semicon. Dev. and ICs (1995) p. 267, DOI: 10.1109/ISPSD.1995.515047. Google ScholarA. Strollo and P. Spirito , A two dimensional analytical model for the output I–V characteristics of the static induction transistor (SIT), Proc. Intl. Symp. Power Semicon. Dev. and ICs (1990) p. 196. Google Scholar- J. Nishizawaet al., IEEE Electron Dev. Lett. 11, 143 (1990), DOI: 10.1109/55.61776. Crossref, Web of Science, Google Scholar
K. Yano et al., Improvement in on-resistance of a high purity channel SIT by a shielded gate structure, Proc. Intl. Symp. Power Semicon. Dev. and ICs (1992) p. 226. Google Scholar-
P. Gray and C. Searle , Electronic Principles – Physics, Models, and Circuits ( Wiley , New York, NY , 1969 ) . Google Scholar Y. Kajiwara , Y. Yukimoto and K. Shirahata , High power microwave static induction transistor, Intl. Microwave Symp. (MTT-S) (1977) p. 281. Google ScholarC. Weitzel , Wide bandgap semiconductor RF power devices, IEEE Intl. Symp. Compound Semicon. (1997) p. 421, DOI: 10.1109/ISCS.1998.711676. Google ScholarH. Tadano et al., Low loss static induction devices (transistors and thyristors), Proc. 20th Intl. Conf. Microelectronics (MIEL) (1995) p. 353, DOI: 10.1109/ICMEL.1995.500892. Google Scholar- C. Kimet al., IEEE Electron Dev. Lett. 13, 95 (1992), DOI: 10.1109/55.144970. Crossref, Web of Science, Google Scholar
- J. Stork and J. Plummer, IEEE Trans. Electron Dev. 28, 1354 (1981). Crossref, Web of Science, Google Scholar
- J. Nishizawa, T. Ohmi and H. Chen, IEEE Trans. Electron Dev. 29, 1233 (1982). Crossref, Web of Science, Google Scholar
- K. Yanoet al., IEEE Electron Dev. Lett. 15, 321 (1994), DOI: 10.1109/55.311121. Crossref, Web of Science, Google Scholar
K. Yano et al., A novel rectifier based on bipolar mode SIT structure, Proc. Intl. Symp. Power Semicon. Dev. and ICs (1995) p. 273, DOI: 10.1109/ISPSD.1995.515048. Google ScholarY. Uesugi et al., Fundamental and third harmonic operation of SIT inverter and its applications to RF thermal plasma generation, Proc. Power Conv. Conf. (PCC) (2002) p. 1473, DOI: 10.1109/PCC.2002.998191. Google ScholarY. Uesugi et al., Third harmonic operation of SIT inverter RF source for ICRF heating in the divertor plasma simulator NAGDIS-II, Digest of Pulsed Power Plasma Sci. (PPPS) (2001) p. 1677, DOI: 10.1109/PPPS.2001.961327. Google ScholarH. Ogiwara and M. Nakaoka , Resonant High Frequency Inverters using Static Induction Transistors, 3rd Intl. Conf. Power Electron. and Drive Syst. (1988) p. 29. Google Scholar- H. Ogiwara, L. Garnage and M. Nakaoka, IEE Proc. Electr. Power Appl. 148, 385 (2001), DOI: 10.1049/ip-epa:20010572. Crossref, Google Scholar
Y. Hatanaka , M. Yamagami and M. Nakaoka , ZCS-ZVS Characteristics of high frequency inverter and DC-DC converter, 13th Intl. Telecomm. Energy Conf. (INTELEC) (1991) p. 488, DOI: 10.1109/INTLEC.1991.172440. Google ScholarY. Hatanaka et al., High frequency inverter and DC-DC converter with ZCS-ZVS mode, Intl. Conf. Industrial Electronics, Control, and Instrumentation (IECON) (1991) p. 237, DOI: 10.1109/IECON.1991.239300. Google Scholar- S. Miyazawa and F. Nakamura, IEE Proc. Pt. B 136, 293 (1989). Google Scholar
- J. Nakamuraet al., IEEE Trans. Electron Dev. 40, 334 (1993), DOI: 10.1109/16.182510. Crossref, Web of Science, Google Scholar
- J. Nishizawaet al., IEEE J. Solid State Circuits 13, 622 (1978), DOI: 10.1109/JSSC.1978.1051110. Crossref, Web of Science, Google Scholar
Y. Horiba et al., Static induction transistor logic compatible with 1 GHz ECL circuits, IEEE Intl. Solid State Circuits Conf. (ISSCC) (1980) p. 64. Google ScholarR. Clarke et al., Recent advances in high temperature, high frequency SiC devices, High Temp. Electronic Matl. Dev. and Sensors Conf. (1998) p. 18, DOI: 10.1109/HTEMDS.1998.730637. Google ScholarR. Siergiej et al., 4H-SiC continuous wave SITs, IEEE 57th Dev. Res. Conf. (1999) p. 98, DOI: 10.1109/DRC.1999.806339. Google ScholarJ. Henning et al., Design and demonstration of C-band static induction transistors in 4H silicon carbide, IEEE 57th Dev. Res. Conf. (1999) p. 48, DOI: 10.1109/DRC.1999.806319. Google Scholar- J. Henninget al., IEEE Trans. Electron Dev. Lett. 21, 578 (2000), DOI: 10.1109/55.887471. Crossref, Web of Science, Google Scholar
R. Siergiej et al., High gain 4H-SiC static induction transistors using novel sub-micron air bridging, IEEE Dev. Res. Conf. (DRC) (1997) p. 136, DOI: 10.1109/DRC.1997.612502. Google ScholarR. Clarke et al., A 16 W, 40% efficient, continuous wave, 4H-SiC, L-band SIT, IEEE Conf. High Performance Dev. (Cornell Conf.) (2000) p. 141, DOI: 10.1109/CORNEL.2000.902530. Google ScholarR. Clarke , Silicon carbide devices for power applications, IEEE Proc. Bipolar/BiCMOS Circuits Technol. Mtg. (BCTM) (2001) p. 124, DOI: 10.1109/BIPOL.2001.957872. Google ScholarA. Morse et al., Recent application of SiC to high power microwave, IEEE Intl. Microwave Symp. (MTT-S) (1997) p. 53, DOI: 10.1109/MWSYM.1997.604519. Google Scholar- J. Wang and B. Williams, IEEE Trans. Electron Dev. 46, 589 (1999), DOI: 10.1109/16.748883. Crossref, Web of Science, Google Scholar
- R. W. Keyes, Proc. IEEE 60, 225 (1972). Crossref, Web of Science, Google Scholar
- E. O. Johnson, RCA Review 26, 163 (1963). Google Scholar
- B. Baliga, IEEE Electron Dev. Lett. 10, 455 (1989), DOI: 10.1109/55.43098. Crossref, Web of Science, Google Scholar
S. Delage , D. Floriot and C. Brylinski , Solid state RF power amplifiers: status and perspective, IEEE 10th Intl. Symp. Electron Dev. Microwave and Optoelectronic Appl. (2002) p. 136. Google Scholar- K. Shenai, R. Scott and B. Baliga, IEEE Trans. Electron Dev. 36, 1811 (1989), DOI: 10.1109/16.34247. Crossref, Web of Science, Google Scholar
- R. Trew, J. Yan and P. Mock, Proc. IEEE 79, 598 (1991), DOI: 10.1109/5.90128. Crossref, Web of Science, Google Scholar
-
B. J. Baliga , Modern Power Devices ( Krieger , Malabar, FL , 1992 ) . Google Scholar
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