PROPOSAL OF NOVEL STRUCTURE LIGHT EMITTING DEVICES CONSISTING OF InN/GaN MQWs WITH ULTRATHIN InN WELLS IN GaN MATRIX

Novel structure light emitting diodes (LEDs) made of InN/GaN multiple quantum wells (MQWs) are proposed and demonstrated. The MQWs consisted of very fine and narrow 1 monolayer (ML)-thick InN wells embedded in GaN matrix, which were successfully fabricated by radio-frequency molecular beam epitaxy. The thickness of InN wells can be fractional ML and/or two MLs depending on the growth conditions, resulting in different wavelength light emissions from deep violet to blue. Epitaxy processes for the MQWs fabrication are very unique on the basis of the self-ordering and coherent growth mode for atomically flat ~1 ML InN well deposition on GaN template. It is shown that the epitaxy temperature for 1 ML InN wells can be much higher than the highest epitaxy temperature of thick InN layer due to the effects of GaN matrix. Bright electroluminescence (EL) emission is observed at 418 nm at room temperature in LEDs fabricated by the MQWs. Further it is confirmed that the quantum confined Stark effect (QCSE) in InN wells is remarkably reduced due to the effects with using ultimately thin InN wells as active layers, resulting an extremely small blue shift in the EL peak wavelengths for two orders different injection current levels.