5-TERMINAL THzGaN BASED TRANSISTOR WITH FIELD- AND SPACE-CHARGE CONTROL ELECTRODES
Abstract
We present a novel approach to achieve terahertz-range cutoff frequencies and maximum frequencies of operation of GaN based heterostructure field-effect transistors (HFETs) at relatively high drain voltages. Strong short-channel effects limit the frequency of operation and output power in conventional geometry GaN HFETs. In this work, we propose a novel device with two additional independently biased electrodes controlling the electric field and space-charge close to the gate edges. As a result, the effective gate length extension due to short channel effects is diminished and electron velocity in the device channel is increased. Our simulations show that the proposed five-terminal HFET allows achieving fT=1.28 THz and fmax= 0.815 THz at the drain voltages as high as 12 V. Hence, this device opens up a new approach to designing THz transistor sources.
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