A ROOM TEMPERATURE BALLISTIC DEFLECTION TRANSISTOR FOR HIGH PERFORMANCE APPLICATIONS

The Ballistic Deflection Transistor (BDT) is a novel device that is based upon an electron steering and a ballistic deflection effect. Composed of an InGaAs-InAlAs heterostructure on an InP substrate, this material system provides a large mean free path and high mobility to support ballistic transport at room temperature. The planar nature of the device enables a two step lithography process, as well, implies a very low capacitance design. This transistor is unique in that no doping junction or barrier structure is employed. Rather, the transistor utilizes a two-dimensional electron gas (2DEG) to achieve ballistic electron transport in a gated microstructure, combined with asymmetric geometrical deflection. Motivated by reduced transit times, the structure can be operated such that current never stops flowing, but rather is only directed toward one of two output drain terminals. The BDT is unique in that it possesses both a positive and negative transconductance region. Experimental measurements have indicated that the transconductance of the device increases with applied drain-source voltage. DC measurements of prototype devices have verified small signal voltage gains of over 150, with transconductance values from 45 to 130 mS/mm depending upon geometry and bias. Gate-channel separation is currently 80nm, and allows for higher transconductance through scaling. The six terminal device enables a normally differential mode of operation, and provides two drain outputs. These outputs, depending on gate bias, are either complementary or non-complementary. This facilitates a wide variety of circuit design techniques. Given the ultralow capacitive design, initial estimates of f_t, for the device fabricated with a 430nm gate width, are over a THz.