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SURFACE ACOUSTIC WAVE PROPAGATION IN GaN-ON-SAPPHIRE UNDER PULSED SUB-BAND ULTRAVIOLET ILLUMINATION

VENKATA S. CHIVUKULA

Center for Integrated Electronics, Rensselaer Polytechnic Instutite, 110 8th Street, Troy, New York 12180, U.S.A

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DAUMANTAS CIPLYS

Center for Integrated Electronics, Rensselaer Polytechnic Instutite, 110 8th Street, Troy, New York 12180, U.S.A

Department of Radiophysics, Vilnius University, Sauletekio 9, Vilnius 10222, Lithuania

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KAI LIU

Center for Integrated Electronics, Rensselaer Polytechnic Instutite, 110 8th Street, Troy, New York 12180, U.S.A

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MICHAEL S. SHUR

Center for Integrated Electronics, Rensselaer Polytechnic Instutite, 110 8th Street, Troy, New York 12180, U.S.A

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, and

REMIS GASKA

Sensor Electronic Technology Inc., 1195 Atlas Road, Columbia, SC 29209, U.S.A

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https://doi.org/10.1142/S0129156409006102Cited by:0 (Source: Crossref)

Abstract

We investigated transient amplitude and phase response of GaN-on-sapphire SAW delay-line device subjected to pulsed sub-band UV illumination. We correlated these results with photoluminescence measurements in two GaN samples with the same emission spectra but different carrier lifetime. The SAW response measurements showed that under pulse illumination the sample with shorter lifetime exhibited gradual rise in the phase and amplitude change in millisecond range. Under similar conditions, the sample with a longer lifetime responded faster. We attribute this change to the presence of defect related transitions of the photoexcited carriers and their interaction with surface acoustic waves. Our results demonstrate the possibility of characterization of compensated GaN samples by measuring the phase and amplitude variations in the SAW transmission mode under pulsed UV excitation.

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SURFACE ACOUSTIC WAVE PROPAGATION IN GaN-ON-SAPPHIRE UNDER PULSED SUB-BAND ULTRAVIOLET ILLUMINATION

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