No Access

PACKAGING AND WIDE-PULSE SWITCHING OF 4 MM × 4 MM SILICON CARBIDE GTOs

HEATHER O'BRIEN

U.S. Army Research Laboratory, 2800 Powder Mill Road, Adelphi, MD, USA

Search for more papers by this author

and

M. GAIL KOEBKE

U.S. Army Research Laboratory, 2800 Powder Mill Road, Adelphi, MD, USA

Search for more papers by this author

https://doi.org/10.1142/S0129156409006230Cited by:0 (Source: Crossref)

Abstract

The U. S. Army Research Laboratory (ARL) is investigating compact, energy-dense electronic components to realize high-power, vehicle-mounted survivability and lethality systems. These applications require switching components that are low in weight and volume, exhibit reliable performance, and are easy to integrate into the vehicles' systems. The devices reported here are 4 mm × 4 mm silicon carbide GTOs rated for 3000 V blocking. These devices were packaged at ARL for high pulse current capability, high voltage protection, and minimum package inductance. The GTOs were switched in a 1-ms half-sine, single-pulse discharge circuit to determine reliable peak current and recovery time (or T_q). The GTOs were repeatedly switched over 300 A peak (3.3 A/cm² and an action of 60 A²s) with a recovery time of 20 µs. The switches were also evaluated for dV/dt immunity up to an instantaneous slope of 3 kV/ µs.

Keywords:

Remember to check out the Most Cited Articles!
Check out these Notable Titles in Antennas

References

S. B. Bayne and D. Ibitayo, Evaluation of SiC GTOs for pulse power switching, Proc. 14th IEEE Pulsed Power Conf. (2003) pp. 135–138. Google Scholar
S. Ryuet al., IEEE Electron Device Letters 22(3), 127 (2001). Web of Science, Google Scholar
V. Temple, Super' GTO's push the limits of thyristor physics, Proc. 35th Annu. IEEE Power Electronics Specialists Conf. (2004) pp. 604–610. Google Scholar
H. O'Brien et al. , Overview of pulsed power research at the Army Research Laboratory , Proc. 33rd Annual GOMACTech Conference ( 2008 ) . Google Scholar
H. O'Brienet al., Evaluation of the safe operating area of a 2.0 cm2 Si SGTO, Proc. of the 2007 IEEE Pulsed Power and Plasma Science Conf.2 (2007) pp. 1034–1039. Google Scholar
H. O'Brienet al., IEEE Trans. Magn. 43(1), 259 (2007), DOI: 10.1109/TMAG.2006.887690. Crossref, Web of Science, Google Scholar
"Silicon carbide substrates: product specifications," Cree, Inc., Durham, NC, Version MATCATALOG. 00D, Revised Jan. 2005 . Google Scholar
T. Burkeet al., IEEE Trans. Magn. 33(1), 432 (1997), DOI: 10.1109/20.560051. Crossref, Web of Science, Google Scholar
B. Jayant Baliga , Power Semiconductor Devices ( PWS Publishing Co. , Boston , 1996 ) . Google Scholar

System Upgrade on Tue, May 28th, 2024 at 2am (EDT)

PACKAGING AND WIDE-PULSE SWITCHING OF 4 MM × 4 MM SILICON CARBIDE GTOs

Abstract

Recommended