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SEMICONDUCTING CARBON NANOTUBE PHOTOVOLTAIC PHOTODETECTORS

Department of Materials Science and Engineering, University of Wisconsin-Madison, 1509 University Ave., Madison, WI 53706, USA

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and

MICHAEL S. ARNOLD

Department of Materials Science and Engineering, University of Wisconsin-Madison, 1509 University Ave., Madison, WI 53706, USA

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https://doi.org/10.1142/S0129156411006970Cited by:9 (Source: Crossref)

Abstract

A photovoltaic photodetector harnessing near infrared band gap absorption by thin films of post-synthetically sorted semiconducting single walled carbon nanotubes (s-SWCNTs) is described. Peak specific detectivity of 6×10¹¹ Jones at -0.1 V bias at 1210 nm is achieved using a heterojunction device architecture: indium tin oxide/ ca. 5 nm s-SWCNT / 120 nm C₆₀ / 10 nm 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) / Ag. The photodiodes are characterized by a series resistance of 2.9 Ω cm² and a rectification ratio of 10⁴ at ±1V. These results are expected to guide the exploration of new classes of solution-processable, mechanically flexible, integrable, thin film photovoltaic photodetectors with tunable sensitivity in the visible and infrared spectra based on semiconducting carbon nanotubes.

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