GaInSb and AlGaInSb compositionally graded buffer layers grown on GaSb by MBE were used to develop unrelaxed InAs_1-xSb_x epitaxial alloys with strain-free native lattice constants up to 2.1% larger than that of GaSb. The in-plane lattice constant of the strained top buffer layer was grown to be equal to the native, unstrained lattice constant of InAs_1-xSb_x with given x. The InAs_0.56Sb_0.44 layers demonstrated a photoluminescence (PL) peak at 9.4 μm at T = 150 K. The minority carrier lifetime measured at 77 K for InAs_0.8Sb_0.2 was 250 ns.

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InAs1-xSbx ALLOYS WITH NATIVE LATTICE PARAMETERS GROWN ON COMPOSITIONALLY GRADED BUFFERS: STRUCTURAL AND OPTICAL PROPERTIES

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InAs_1-xSb_x ALLOYS WITH NATIVE LATTICE PARAMETERS GROWN ON COMPOSITIONALLY GRADED BUFFERS: STRUCTURAL AND OPTICAL PROPERTIES