Special Issue on “Nanoelectronics, Nanophotonics, Quantum and Emerging Technologies”
Guest Editors: F. Jain, C. Broadbridge, M. Gherasimova and H. Tang

Abstract

The gate-all-around junctionless field-effect transistor (GAA JL FET)-based biosensor has recently attracted worldwide attention due to its good sensitivity to gate-all-around architecture and overall conduction mechanism. The effect of temperature usually affects the performance of transistors and sensors. Therefore, the impact of temperature on the 3D GAA JL FET-based biosensor has been investigated in this work. The dielectric modulation (DM) approach has been considered for including biomolecules. Consequently, the main proprieties of this biosensor have been investigated by ranging the temperature from 77K to 400K. The simulated results showed that the on-state current lowers as the temperature rises, but the off-state current increases. The off-current variation concerning the temperature is higher than the on-current change. Also, this type of biosensor appears to have a finer threshold voltage. Furthermore, the obtained results reveal that the current sensitivity is increased when ranging from temperature from 200K to 400K, and deteriorates for lower temperature values, like 100K and 77K. In addition, the GAA JL FET-based biosensor is more reliable for the detection of neutral biomolecules at high temperatures.

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