POSITRON ANNIHILATION IN SiC

Valence electron and positron charge densities in SiC are obtained from wave functions derived in a model pseudopotential bandstructure calculation. It is observed that the positron density is maximum in the open interstices and is excluded not only from the ion cores but also, to a considerable degree, from the valence bonds. Electron–positron momentum densities are calculated for the (001–110) plane. The results are used to analyze the positron effect in large gap semiconductors.