Research PaperNo Access

Simulation of photon-generated carrier transport characteristics in CdSe quantum dot thin films

Fuzhong Zheng

School of Automation, Chengdu University of Information Technology, Chengdu 610225, China

College of Mechanical Engineering, Sichuan University of Science and Engineering, Zigong 643000, China

E-mail Address: zfz@cuit.edu.cn

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Hongbing Zhu

School of Automation, Chengdu University of Information Technology, Chengdu 610225, China

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Yong Huang

College of Mechanical Engineering, Sichuan University of Science and Engineering, Zigong 643000, China

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Xiaozhao Jin

School of Automation, Chengdu University of Information Technology, Chengdu 610225, China

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Danping Huang

College of Mechanical Engineering, Sichuan University of Science and Engineering, Zigong 643000, China

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Ying Wu

School of Intelligent Technology and Engineering, Chongqing University of Science and Technology, Chongqing 401331, China

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, and

Jiajia Liu

School of Automation, Chengdu University of Information Technology, Chengdu 610225, China

E-mail Address: liujj@cuit.edu.cn

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https://doi.org/10.1142/S012918312350167XCited by:1 (Source: Crossref)

Abstract

Studying the transport characteristics of carriers in quantum dot (QD) film provides theory support for the structure design and performance improvement of QD film device. However, time of flight experiment can only test the global optoelectric current signal brought by the carrier transport, and cannot analyze the carrier transport in the transport layer. Here, the hopping transport model of photogenerated carriers in QD films was established to study the expansion and drift movement of carriers in the PDE module of COMSOL. According to the material properties of the actual QD films, the carrier transport in single-size QD films was studied.

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