Research ArticleNo Access
HAFNIUM AND NITROGEN INTERACTION AT Hf/GaN(0001) INTERFACE
https://doi.org/10.1142/S0218625X20500134Cited by:1 (Source: Crossref)
Abstract
The growth and stability of hafnium films on n-GaN(0001) surface with native oxide was investigated with X-ray and ultraviolet photoelectron spectroscopy (XPS, UPS). It is shown that hafnium creates a continuous and stable layer on GaN substrate. Thermal treatment at 850∘C of Hf/GaN system causes decomposition of GaN and reaction of hafnium with atomic nitrogen from the substrate. XPS spectra demonstrate the reaction by a strong shift of the N 1s and Hf 4f lines. An attempt for bringing on the same reaction with molecular nitrogen under pressure of 1.2×10−6 mbar was not successful. UPS spectra show a metallic character of the hafnium adlayer in such instances.
