Mechanism of SuperconductivityNo Access

DISORDER AND FRUSTRATION IN DILUTED MAGNETIC SEMICONDUCTORS AT LOW CARRIER DENSITIES

R. N. BHATT

Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, United States of America

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CHENGGANG ZHOU

Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, United States of America

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MALCOLM KENNETT

Cavendish Laboratory, University of Cambridge, Madingley Rd, Cambridge, CB3 0HE, United Kingdom

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MONA BERCIU

Department of Physics and Astronomy, University of British Columbia, Vancouver, BC V6T 1Z1, Canada

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XIN WAN

Institut für Nanotechnologie, Forschungszentrum Karlsruhe, D-76021 Karlsruhe, Germany

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https://doi.org/10.1142/S0217979205027858Cited by:0 (Source: Crossref)

Abstract

We examine the effects of positional disorder of the magnetic ion in III-V Diluted Magnetic Semiconductors such as (Ga,Mn)As at low carrier densities on the nature of the low-temperature ordered magnetic state, using numerical mean field and Monte Carlo methods. We find that positional disorder leads to a highly inhomogeneous ferromagnetic order in the low carrier density limit, with unusual thermodynamic and magnetic behavior. Spin-orbit coupling presented in the valence band leads to frustration in the hole-doped system, but does not significantly affect the low temperature magnetization.

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DISORDER AND FRUSTRATION IN DILUTED MAGNETIC SEMICONDUCTORS AT LOW CARRIER DENSITIES

Abstract

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