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PREPARATION OF SnO₂ NANOWIRES SYNTHESIZED BY VAPOR-SOLID MODE AND ITS GROWTH MECHANISM

National Laboratory of Solid State Microstructure and Department of physics, Nanjing University, Nanjing, 210093, P.R. China

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JIANGUO WAN

National Laboratory of Solid State Microstructure and Department of physics, Nanjing University, Nanjing, 210093, P.R. China

Corresponding author.

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YAO CHENG

National Laboratory of Solid State Microstructure and Department of physics, Nanjing University, Nanjing, 210093, P.R. China

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DONGHUA GU

National Laboratory of Solid State Microstructure and Department of physics, Nanjing University, Nanjing, 210093, P.R. China

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, and

YONGJIE ZHAN

National Laboratory of Solid State Microstructure and Department of physics, Nanjing University, Nanjing, 210093, P.R. China

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https://doi.org/10.1142/S0217979205031742Cited by:4 (Source: Crossref)

Abstract

Single crystal SnO₂ nanowires with diameters of 20 ~ 100nm have fabricated by the reaction of vapor SnO with the oxygen. Vapor-Solid (VS) mechanism is applied to explain to the growth process. Scan electron microscopy (SEM), Transmission electron microscopy (TEM), Selected area diffraction (SAED) and High resolution transmission electron microscopy (HRTEM) studies show that the SnO₂ nanowires grow along [100] or [010] orientation, which is not in agreement with the symmetry of SnO₂ crystal structure. We prove that the low vapor saturation is the key growth condition of the SnO₂ nanowires which prevents the two dimensional nucleation on the side faces and causes one dimensional large aspect ratio.

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References

V. Dusastre and D. E. Williams, J. Mater. Chem. 9, 445 (1999), DOI: 10.1039/a807380e. Crossref, Web of Science, Google Scholar
W. Y. Chung, D. D. Lee and B. K. Sohn, Thin solid films 221, 304 (1992), DOI: 10.1016/0040-6090(92)90832-V. Crossref, Web of Science, ADS, Google Scholar
Masayuki Okuya and Shogi Kaneko, J. Eur. Ceram. Soc. 21, 2099 (2001), DOI: 10.1016/S0955-2219(01)00180-7. Crossref, Web of Science, Google Scholar
X. Duanet al., Nature 409, 66 (2001), DOI: 10.1038/35051047. Crossref, Web of Science, ADS, Google Scholar
M. H. Huanget al., Science 292, 1897 (2002), DOI: 10.1126/science.1060367. Crossref, Web of Science, Google Scholar
P. Yanget al., Adv. Funct. Mater. 12, 323 (2002). Crossref, Web of Science, Google Scholar
M. Nagano, J. Crystal Growth 66, 377 (1984), DOI: 10.1016/0022-0248(84)90221-5. Crossref, Web of Science, ADS, Google Scholar
W. K. Choiet al., J. Mater. Sci. Lett. 16, 1551 (1997), DOI: 10.1023/A:1018547813759. Crossref, Google Scholar
P. Bennema and J. P. van der Eerden, Morphology of crystals, ed. Sunagawa (Terra Sci, Tokyo, 1987) p. 1. Google Scholar
A. A. Chernov, Modern Crystallography - Crystal Growth (Springer, Berlin, 1984) p. 1. Crossref, Google Scholar
P. Hartman, Morphology of Crystals, ed. Sunagawa (Terra Sci, Tokyo, 1987) p. 269. Google Scholar
G. W. Sears, Acta. Met. 3, 367 (1955), DOI: 10.1016/0001-6160(55)90042-0. Crossref, Google Scholar
G. W. Sears, J. Chem. Phys. 25, 637 (1955), DOI: 10.1063/1.1743018. Crossref, Web of Science, ADS, Google Scholar