Ru_1-xSb_xSr₂(Eu_0.7Ce_0.3)₂Cu₂O_10-δ systems were prepared by conventional solid state reaction method. The structural analysis was investigated using X-ray diffraction. Electrical resistivity, Hall effect and magnetic susceptibility measurements on Ru:1222 doped with Sb are presented, together with results in the temperature range 5–300 K. Transition temperature decreases from 43 K for x = 0.00 to 20 K for x = 0.06 Sb. This may be due to a distortion of RuO₆ octahedral, which is responsible of the increase in hole localization. The Hall effect anomalous decreases below T_magnetic which may be explained within a simple two-band model by a transition from localized to more itinerant behavior in the RuO₂ layer at T_magnetic. The behavior of magnetic susceptibility is caused by an antisymmetric exchange coupling of the Dzyaloshinsky–Morya type between neighboring Ru moments.

Keywords:

PACS: 74.25.Fy, 74.25.Ha, 74.70.Ad

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