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ELECTRICAL BEHAVIOR OF SOME LANTHANUM-BASED RARE EARTH CMR MATERIALS

V. RAJA KUMARI

Department of Physics, Osmania University, Hyderabad-500 007, India

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G. VENKATAIAH

Department of Physics, Osmania University, Hyderabad-500 007, India

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, and

P. VENUGOPAL REDDY

Department of Physics, Osmania University, Hyderabad-500 007, India

Corresponding author.

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https://doi.org/10.1142/S021797920503236XCited by:4 (Source: Crossref)

Abstract

A lanthanum-based mixed rare earth manganite system with general composition formula La_0.33Ln_0.34Sr_0.33MnO₃, (where Ln is a rare earth ion) has been prepared by the solid state reaction method. After usual characterization of these materials, a systematic study of the electrical resistivity both as a function of temperature (80–300 K) and magnetic field up to 7 Tesla was undertaken mainly to understand the conduction mechanism. On analyzing the experimental results, it has been concluded that the metallic (ferromagnetic) part of the resistivity (ρ) (below T_P) fits with the equation ρ(T)=ρ₀+ρ₂T²+ρ_4.5T^4.5, indicating the importance of grain/domain boundary effects (ρ₀), the electron-electron scattering process (ρ₂T²) and the two magnon scattering process (ρ_4.5T^4.5). On the other hand, the paramagnetic insulating regime may be explained by using adiabatic small polaron hopping and variable range hopping mechanisms, thereby indicating that polaron hopping might be responsible for the conduction mechanism.

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