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ANNEALING AND PHOTOINDUCED EFFECTS IN ELECTROCHEMICALLY SYNTHESIZED Hg-1212 FILMS

D. D. SHIVAGAN

School of Energy Studies, Department of Physics, Shivaji University, Kolhapur – 416 004, India

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P. M. SHIRAGE

School of Energy Studies, Department of Physics, Shivaji University, Kolhapur – 416 004, India

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S. H. PAWAR

School of Energy Studies, Department of Physics, Shivaji University, Kolhapur – 416 004, India

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TANAY SETH

Centre for Materials for Electronics Technology (C-MET), Panchavati, Off Pashan Road, Pune – 411 008, India

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, and

D. P. AMALNERKAR

Centre for Materials for Electronics Technology (C-MET), Panchavati, Off Pashan Road, Pune – 411 008, India

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https://doi.org/10.1142/S0217979205032589Cited by:0 (Source: Crossref)

Abstract

The thermo-gravimetric analysis (TGA) and differential thermal analysis (DTA) of the as-deposited and electrochemically oxidized Hg₁Ba₂Ca₁Cu₂O_6+δ(Hg-1212) samples were carried out in air, flowing oxygen and nitrogen environment in order to estimate the thermal decomposition temperature and hence to maintain the annealing temperature and atmosphere. After annealing, electrochemically synthesized films showed an increase in T_c from 104.7 K to 119 K and J_c values from 1.43×10³ to 4.3×10³A/cm². Electrochemically oxidized Hg-1212 films in under-, optimally- and over-doped states were irradiated with a Red He–Ne laser (2mW) and the T_c was found to increase from 104.7 K to 106 K and J_c from 1.43×10³ to 1.89×10³A/cm². The effects of annealing and photo-irradiation on structural, microstructural and superconducting properties of electrochemically synthesized Hg-1212 films were investigated and discussed in detail in this paper.

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