PENNING DISCHARGE PLASMA SOURCE AND ITS APPLICATION TO SYNTHESIS OF NANOSTRUCTURED AlN FILMS
Abstract
Penning discharge (PD) sputtering deposition technique is developed and first used in synthesis of nanostructured aluminum nitride (AlN) films. The advantage of the present PD is that discharge current is linearly dependent on power supply voltage. Maximal discharge current up to 180 mA is obtained for power supply voltage of 5 kV with a ballast resistor of 25 kΩ. In contrast, the discharge voltage is only 290 V. Installation of smaller value of the ballast resistor will yield larger discharge current, whereas discharge voltage remains nearly unchanged, which is an important factor employed to the synthesis of high quality of AlN films.
The preferred orientations of nanoscale AlN particles distributions on the surface of the substrates are observed. The increase of the power voltage (discharge current) for sputtering deposition yields different patterns of the nanoscale particles, but sizes of the particles are unchanged. Typical A1–TO and A1–LO bands in Raman spectra of the films are identified, respectively.
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