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EFFECT OF RAPID THERMAL ANNEALING ON THE Mg-DOPED GaN/Si FILM

LIPING ZHU

State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, 310027, People's Republic of China

Corresponding author.

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ZHIZHEN YE

State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, 310027, People's Republic of China

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XIANFENG NI

State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, 310027, People's Republic of China

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ZHE ZHAO

State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, 310027, People's Republic of China

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, and

BINGHUI ZHAO

State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, 310027, People's Republic of China

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https://doi.org/10.1142/S0217979206040817Cited by:1 (Source: Crossref)

Abstract

Mg-doped GaN films have been successfully prepared on Si(111) substrate by metal-organic chemical vapor deposition (MOCVD). Upon rapid thermal annealing (RTA) treatment, the films showed p-type conductivity with a carrier density of 7.84 cm^-3, a mobility of 5.54 cm²V^-1s^-1, and a resistivity of about 0.144 Ωcm, which were much better than that of the films without rapid thermal annealing (RTA) treatment. It was found that the surface morphology and crystal quality of the obtained p-type GaN films were greatly improved by RTA treatment, while the residual stress and dislocations in these films were decreased.

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