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EFFECTS OF Ge DOPING THROUGH ION IMPLANTATION ON THE STRUCTURAL AND OPTICAL PROPERTIES OF ZnO THIN FILMS PREPARED BY SOL-GEL TECHNIQUE

Department of Applied Physics, University of Electronic Science and Technology of China, No. 4 Sec 2, North Jianshe Rd, Chengdu, 610054, P. R. China

Department of Physics, Zhanjiang Normal College, No. 29, Cunjin Rd, Zhanjiang, 524048, P. R. China

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X. T. ZU

Department of Applied Physics, University of Electronic Science and Technology of China, No. 4 Sec 2, North Jianshe Rd, Chengdu, 610054, P. R. China

Corresponding author.

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X. XIANG

Department of Applied Physics, University of Electronic Science and Technology of China, No. 4 Sec 2, North Jianshe Rd, Chengdu, 610054, P. R. China

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M. Y. CHEN

Department of Applied Physics, University of Electronic Science and Technology of China, No. 4 Sec 2, North Jianshe Rd, Chengdu, 610054, P. R. China

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, and

W. G. ZHENG

Laser Fusion Research Center, Chinese Academy of Engineering Physics, Mianyang 621900, P. R. China

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https://doi.org/10.1142/S0217979207038290Cited by:1 (Source: Crossref)

Abstract

ZnO thin films were first prepared by the sol–gel process, and then Ge ions were implanted into the ZnO films. The effects of ion implantation on the structural and optical properties of the ZnO films were investigated by X-ray diffraction, photoluminescence (PL), and optical transmittance measurements. Measurement results showed that the intensity of the (002) diffraction peak was decreased and the full width at half maximum was narrowed. PL emission was greatly extinguished after Ge ion implantation. Both the near band edge (NBE) excitonic UV emission at 391 nm and the defect related deep level emission centered at 470 nm in the visible region were decreased after Ge ion implantation. NBE peak and the absorption edge were observed to have a blueshift toward higher energy.

Keywords:

PACS: 61.72.Ww, 78.30.Fs

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