DOPING DEPENDENCE OF SUPERCONDUCTING GAP IN Bi2Sr2-xLaxCuO6+δ (x = 0.2, 0.4, 0.6)
Abstract
We observed the distribution of the superconducting gap in Bi2Sr2-xLaxCuO6+δ (Bi2201-La) by scanning tunneling spectroscopy at x = 0.2 (over doped), 0.4 (optimally doped) and 0.6 (under doped). The superconducting gap was spatially distributed in all samples. As the carrier concentration is reduced, the distribution became much broader and the mean value of superconducting gap, Δmean increased. We found that the distribution and Δmean in Bi2201-La grew more rapidly than in Bi2Sr2CaCu2O8+δ with decreasing the carrier concentration.
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