World Scientific
Skip main navigation

Cookies Notification

We use cookies on this site to enhance your user experience. By continuing to browse the site, you consent to the use of our cookies. Learn More
×

System Upgrade on Tue, May 28th, 2024 at 2am (EDT)

Existing users will be able to log into the site and access content. However, E-commerce and registration of new users may not be available for up to 12 hours.
For online purchase, please visit us again. Contact us at customercare@wspc.com for any enquiries.

DOPING DEPENDENCE OF SUPERCONDUCTING GAP IN Bi2Sr2-xLaxCuO6+δ (x = 0.2, 0.4, 0.6)

    https://doi.org/10.1142/S0217979207044251Cited by:1 (Source: Crossref)

    We observed the distribution of the superconducting gap in Bi2Sr2-xLaxCuO6+δ (Bi2201-La) by scanning tunneling spectroscopy at x = 0.2 (over doped), 0.4 (optimally doped) and 0.6 (under doped). The superconducting gap was spatially distributed in all samples. As the carrier concentration is reduced, the distribution became much broader and the mean value of superconducting gap, Δmean increased. We found that the distribution and Δmean in Bi2201-La grew more rapidly than in Bi2Sr2CaCu2O8+δ with decreasing the carrier concentration.

    You currently do not have access to the full text article.

    Recommend the journal to your library today!