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Research PapersNo Access

THE DYNAMICS OF GaAs/AlGaAs HETEROSTRUCTURE UNDER THE TRANSVERSE MAGNETIC FIELDS AND MICROWAVE IRRADIATIONS

Institute of Electronic Science & Technology, College of Information Engineering, Zhejiang University of Technology, Hangzhou, Zhejiang, 310014, P.R. China

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Department of Communication Engineering, Shanghai University, Shanghai 200444, P.R. China

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Department of Communication Engineering, Shanghai University, Shanghai 200444, P.R. China

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Department of Communication Engineering, Shanghai University, Shanghai 200444, P.R. China

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https://doi.org/10.1142/S0217979209052595Cited by:1 (Source: Crossref)

Abstract

The numerical results of a set of nonlinear equations for a modulation-doped GaAs/AlGaAs heterostructure under external fields are presented. For pure dc bias at a fixed magnetic field, we observe the self-sustained oscillations due to the traveling high electric field domain in the system. Varying the magnetic field, the width of the domain and the oscillation amplitude will be changed. By imposing the microwave irradiation, the system shows frequency locking, quasiperiodicity, and chaos depending on the amplitude and the frequency of the microwave. It is shown that these interesting oscillations are connected with the high electric field domains.

Keywords:

PACS: 73.40.-c, 73.50.-h, 72.20.Ht, 05.45.-a

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Vol. 23, No. 15

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Received 16 January 2008

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