DECREASING OF SPATIAL DIMENSION OF A SERIAL OF DIFFUSED-JUNCTION RECTIFIERS IN A MULTILAYER STRUCTURE IN ACCOUNT WITH NONLINEAR EFFECTS: OPTIMIZATION OF ANNEALING TIME
Abstract
It has been recently shown, that inhomogeneity of a multilayer structure (MS) leads to increase in sharpness of diffused-junction rectifier (see, for example, Refs. 1 and 2), which were formed in the MS. It has been also shown, that together with increasing of the sharpness homogeneity of impurity distribution in doped area increases. In this paper, both the effects (together increasing of sharpness of p–n-junction and increasing of homogeneity of impurity distribution) have been used for production of a system of a serial p–n-junctions (such as bipolar transistors). Annealing time has been optimized for increasing simultaneously the sharpness and the homogeneity.
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