INTERFACIAL STRUCTURE OF Fe3Si/FeSi2 LAYERED FILMS DEPOSITED ON Si(111) AT ELEVATED SUBSTRATE-TEMPERATURES
Abstract
Influence of substrate-temperature on the interfacial structure of Fe3Si/FeSi2 layered films deposited on a Si(111) substrate were studied. Fe3Si/FeSi2 films with sharp interfaces were grown at room substrate-temperature. At a substrate-temperature of 300 °C, interfaces between the Fe3Si and FeSi2 layers were obviously unsharpened, while the crystallinity of Fe3Si was enhanced. The compositional periodic structure was barely unsharpened and it was nearly the same as that of the films deposited at room substrate-temperature. Epitaxial growth of Fe3Si layers across FeSi2 layers was carried out. This substrate-temperature is the upper limit at which the heterostructure formation takes place. At 400 °C, ε-FeSi was formed due to activated interdiffusion, and the structure of Fe3Si changed partially from B2-type to DO3-type.
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