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STUDY ON MOMENTUM DENSITY IN SEMICONDUCTOR ALLOYS GeC and SnC BY POSITRON ANNIHILATION

N. AMRANE

United Arab Emirates University, Faculty of Science, Physics Department, Al Ain P.O. Box 17551, United Arab Emirates

https://doi.org/10.1142/S0217979210054440Cited by:0 (Source: Crossref)

Abstract

The independent particle model (IPM) coupled with empirical pseudopotential method (EPM) was used to compute the thermalized positron charge densities in specific family of binary tetrahedrally coordinated crystals of formula A^NB^8-N. Initial results show a clear asymmetrical positron charge distribution relative to the bond center. It is observed that the positron density is maximum in the open interstices and is excluded not only from the ion cores but also to a considerable degree from the valence bonds. Electron-positron momentum densities are calculated for the (001, 110) planes. The results are used to analyze the positron effects in GeC and SnC. Our computational technique provides the theoretical means of interpreting the k-space densities obtained experimentally using the two-dimensional angular correlation of annihilation radiation (2D-ACAR).

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