Surfaces, Interfaces and Surface Analysis of MaterialsNo Access

SELF-FORMATION OF MgO OR Al₂O₃ SURFACE LAYER BY ANNEALING OF CuMg OR CuAl DILUTE ALLOYS

Key Laboratory of automobile Materials (Jilin University), Ministry of Education, and School of Material Science and Engineering, Jilin University, Renmin street 5988, Changchun 130022, China

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Q. JIANG

Key Laboratory of automobile Materials (Jilin University), Ministry of Education, and School of Material Science and Engineering, Jilin University, Renmin street 5988, Changchun 130022, China

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S. H. HONG

Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai 980-8577, Japan

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K. MIMURA

Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai 980-8577, Japan

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M. ISSHIKI

Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai 980-8577, Japan

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, and

J. W. LIM

Materials Development Group, Minerals and Materials Processing Division, Korea Institute of Geoscience & Mineral Resources, Daejeon 305-350, Korea

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https://doi.org/10.1142/S0217979210066045Cited by:0 (Source: Crossref)

Abstract

Self-formation of MgO or Al₂O₃ surface layer on CuMg or CuAl alloys by annealing in H₂ gas was investigated theoretically and experimentally. Theoretical consideration shows that Mg or Al can segregate to the surface of Cu during the annealing, while the enrichment ability is much stronger for Mg. Meanwhile, the MgO or Al₂O₃ surface layer is self-formed by the preferential reaction of Mg or Al with O₂ remnant in H₂ atmosphere. The Al₂O₃ surface layer is expected to play a role in passivating the surface of Cu. However, the MgO layer would suffer failure in passivating the surface due to incorporation of Cu and fissures formed in MgO during the annealing process. Our theoretical predictions are in agreement with experimental observations.

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