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Research PapersNo Access

HOW Ge DOPING AFFECTS THE SUPERCONDUCTING PROPERTIES OF (Cu, Tl)-1234 SUPERCONDUCTORS

Materials Science Laboratory, Department of Physics, Quaid-i-Azam University, Islamabad 45320, Pakistan

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and

NAWAZISH A. KHAN

Materials Science Laboratory, Department of Physics, Quaid-i-Azam University, Islamabad 45320, Pakistan

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https://doi.org/10.1142/S0217979211101491Cited by:2 (Source: Crossref)

Abstract

Ge-doped (Cu_0.5Tl_0.5)Ba₂Ca₃(Cu_4-yGe_y)O_12-δ (y = 0, 0.3, 0.6 and 0.9) superconductors have been synthesized at normal pressure through solid state reaction method. Ge has been doped in the CuO₂ planes constituting the superconducting block of these structures. In the as-prepared samples, a suppression of the critical temperature is observed with increased Ge concentration. The suppression of the critical temperature can be attributed to the decreased number of carriers due to their localization at Ge⁴⁺ ions. Ge-doped post-annealed samples have shown enhancement in the critical temperature as well as magnitude of diamagnetism. Oxygen annealing seems to have replenished the charge carries through the process of hole doping in CuO₂/GeO₂ planes, thereby bringing the carrier density closer to the optimum level. Oxygen related phonon modes have also been investigated. A shift in peak positions of the apical and planar oxygen related modes have been observed while modes associated with O_δ oxygen atoms seem stable in both cases of Ge doping and oxygen annealing.

Keywords:

PACS: 72.76.-w, 74.76.-Bz, 74.72.-Jt

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Vol. 25, No. 29

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Received 2 September 2009

Revised 7 June 2010

Keywords