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DEPOSITION OF THIN FILM COPPER NANOSTRUCTURES BY ELECTRON BEAM PHYSICAL VAPOR DEPOSITION TECHNIQUE ON SiO₂/p-TYPE Si(100) AND STUDY OF ITS OXIDATION BEHAVIOR

Faculty of Metallurgy and Materials Engineering, Faculty of Engineering, University of Tehran, Tehran, Iran

and

Corrosion Laboratory, School of Metallurgy and Materials Engineering, University College of Engineering, University of Tehran, North Kargar, Tehran, 11365-4563, Iran

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https://doi.org/10.1142/S0217979211101867Cited by:4 (Source: Crossref)

Abstract

Electron beam physical vapor deposition (EBPVD) is being used in coating components for many applications such as for producing nanostructures and integrated circuits (ICs) coating in electronic industry. In this work, copper was deposited on the SiO₂/p-type Si(100). Thin film characteristics are investigated by scanning electron microscopy and X-ray diffraction (XRD). Then oxidation behavior of deposits was evaluated by Dektak Surface Profiler and weight gain method at 200 and 300°C. Results showed that thin film copper deposited by EBPVD has better oxidation characteristics in comparison with copper foil.

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