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Silicon-based hot electron emitting substrate with double tunneling

School of Electrical and Photoelectronic Engineering, Changzhou Institute of Technology, No. 299 South Tongjiang Road, Changzhou, Jiangsu 213002, P. R. China

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Xinghua Zhan

School of Electrical and Photoelectronic Engineering, Changzhou Institute of Technology, No. 299 South Tongjiang Road, Changzhou, Jiangsu 213002, P. R. China

E-mail Address: ericsw25@163.com

Corresponding author.

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Zoran Salcic

Department of Electrical and Computer Engineering, The University of Auckland, Auckland, New Zealand

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Chee Cheong Wong

Department of Chemical and Materials Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore City 639798, Singapore

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, and

Wei Gao

Department of Electrical and Computer Engineering, The University of Auckland, Auckland, New Zealand

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https://doi.org/10.1142/S0217979217440520Cited by:1 (Source: Crossref)

Abstract

We propose a novel silicon structure, Hot Electron Emitting Substrate (HEES), which exhibits important effect of repeated tunneling at two different voltage ranges, which we refer to as double tunneling. In ambient atmosphere and room temperature, the $I$ $I$ – $V$ $V$ characteristic of HEES shows two current peaks during voltage sweep from 2 to 15 V. These two peaks are formed by the Fowler–Nordheim (FN) tunneling effect and tunneling diode mechanism, respectively.

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References

1. H. Mimura et al., J. Vac. Sci. Technol. B 16, 421 (1998). Crossref, Web of Science, Google Scholar
2. L. Esaki, IEEE Trans. Electron Devices ED-23, 644 (1976). Crossref, Web of Science, ADS, Google Scholar
3. P. Olivo, J. Suñé and B. Riccò, IEEE Electron Device Lett. 12, 620 (1991). Crossref, Web of Science, ADS, Google Scholar
4. C. Chang et al., IEDM Tech. Dig. 29, 194 (1983). Google Scholar
5. R. E. Thurstans and D. P. Oxley, J. Phys. D, Appl. Phys. 35, 802 (2002). Crossref, Web of Science, ADS, Google Scholar
6. C. Y. Wu and C. F. Chen, IEEE Trans. Electron Devices ED-34, 1590 (1987). Web of Science, ADS, Google Scholar
7. G. Groeseneken and H. E. Maes, IEEE Trans. Electron Devices ED-33, 1028 (1986). Crossref, Web of Science, ADS, Google Scholar
8. E. Harari, Highly compact EPROM and flash EEPROM devices, United States Patent, Patent No. 6570790 (2003). Google Scholar
9. K.-Y. Chang, Flash memory, United States Patent, Patent No. 6153906 (2000). Google Scholar
10. H. Nozawa, N. Matrukawa and S. Morita, IEEE Trans. Electron Devices ED-33, 275 (1986). Crossref, Web of Science, ADS, Google Scholar
11. F. Chen et al., Invention disclosure, The University of Auckland, Provisional US patent application (2008). Google Scholar