Photonic spin Hall effect in a one-dimensional photonic crystal with a graphene defect film
Abstract
We investigate the photonic spin Hall effect (PSHE) of a Gaussian beam passing through a one-dimensional photonic crystal with a graphene defect film. We show that an epsilon singularity point and an epsilon-near-zero point of graphene emerge by varying its chemical potential. We find that the chemical potential of graphene significantly alters the transverse shifts of PSHE, while the temperature of graphene has a slight impact on the transverse shifts of PSHE. Moreover, we find that the behavior of PSHE near the singularity point considerably differs from that near the epsilon-near-zero point. Additionally, we further explore the different wavelengths of the incident Gaussian beam on the tunability of PSHE. We show that the considerable transverse shifts can be obtained simultaneously depending on the incident wavelength of the Gaussian beam and the chemical potential of graphene.
| You currently do not have access to the full text article. |
|---|
