High radiative recombination in GaN-based yellow light-emitting diodes
Abstract
The radiative recombination rate is greatly enhanced by the conversion of GaN last quantum barrier (LQB) into aluminium gallium nitride (AlGaN) LQB and further into graded AlGaN electron blocking layer (EBL) in GaN-based yellow light-emitting diode (LED) with emission between 510 nm and 580 nm. Our simulation results reveal an increase in carrier concentration and, therefore, reduction in electron-hole asymmetry in multiple quantum wells (MQWs). The proposed structure demonstrates that in MQWs, the chance of the electron-hole (e-h) overlapping increases. When compared to conventional LED, the radiative recombination increases by 70%, while the hole concentration increases by 20%. In our proposed structure, the turn-on voltage is also decreased from 3.2 V to 2.9 V
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