Research PaperNo Access
Features of liquid-phase epitaxy of new solid solutions of (GaAs)1−y−z(Ge2)y(ZnSe)z and their photoelectric properties
https://doi.org/10.1142/S0217979223501321Cited by:2 (Source: Crossref)
Abstract
In this work, the physical features of growing epitaxial layers of new solid solutions of (GaAs)1−y−z(Ge2)y(ZnSe)z from the liquid phase of the tin solution-melt on GaAs (100) substrates were investigated. The conditions required for the formation of the solid solution of molecular substitution were revealed. A possible configuration of the crystal structure of the solid solution (GaAs)1−y−z(Ge2)y(ZnSe)z is presented. In the spectral photosensitivity of the n-GaAs–p-(GaAs)1−y−z(Ge2)y(ZnSe)z structures, peaks with maxima at photon energies of 1.37 eV and 2.62 eV were found. The band diagram of the solid solution (GaAs)1−y−z(Ge2)y(ZnSe)z was presented.
Keywords:
PACS: 81.15.−z, 73.40.Lq
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