Photovoltaic devices are expected to display peak performance if fabricated with perfect single crystals. Since surfaces break the periodicity of a single crystal, there are regions of defects, which give rise to states inside the forbidden energy gap. In polycrystalline thin films, the main structural defect is the grain boundary. The presence of grain boundaries affects the optical absorption, carrier mobility and lifetime of the semiconductor. This review focuses on grain boundary passivation in thin film photovoltaic devices based on copper chalcogenides. Achieving enhanced performance in copper chalcogenide thin film Photovoltaic devices requires effective grain boundary passivation. This approach aims to mitigate the adverse effects of grain boundaries on the optoelectronic properties of the material, leading to improved efficiency and stability in Photovoltaic devices. The abstract discusses recent developments, methodologies and outcomes related to grain boundary passivation strategies, shedding light on their significance in advancing the performance of copper chalcogenide thin film Photovoltaic devices. The exploration of grain boundary passivation in this context contributes valuable insights to the ongoing efforts in optimizing the performance of thin film Photovoltaic technologies.

Keywords:

PACS: 88.40.hj, 61.72.Mm, 73.50.Pz, 84.60.Jt, 81.05.Hd

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