Research PapersNo Access
The Effect of Hydrostatic Pressure on Bound Polarons in Polar Semiconductor Heterojunctions
https://doi.org/10.1142/S0217984903005937Cited by:1 (Source: Crossref)
Abstract
A variational method is used to investigate the binding energies of bound polarons near the interface in a GaAs/AlxGa1-xAs heterojunction by considering the hydrostatic pressure effect. It is found that the comprehensive pressure effect on the heterojunction factors increases the binding energies near linearly. The pressure influence on the binding energy for the impurity located on the channel side is stronger than that for the impurity located on the barrier side. The pressure effect is more obvious when the impurity is located on the channel side and is not so far from the interface. The pressure influences on the longitudinal optical phonons and interface optical phonons are discussed.
