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PRESSURE EFFECT ON THE INTERFACE EXCITONS IN A TYPE-II ZnTe/CdSe HETEROJUNCTION

Z. Z. GUO

Department of Physics, Inner Mongolia University, Hohhot 010021, P. R. China

Department of Physics, Inner Mongolia Normal University, Hohhot 010022, P. R. China

Corresponding author.

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X. X. LIANG

CCAST (World Laboratory), P. O. Box 8730, Beijing 100080, P. R. China

Department of Physics, Inner Mongolia University, Hohhot 010021, P. R. China

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S. L. BAN

CCAST (World Laboratory), P. O. Box 8730, Beijing 100080, P. R. China

Department of Physics, Inner Mongolia University, Hohhot 010021, P. R. China

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https://doi.org/10.1142/S0217984903006475Cited by:4 (Source: Crossref)

Abstract

A variational method is used to study the ground-state binding energies of interface light-hole excitons in ZnTe/CdSe type-II heterojunctions under the influence of hydrostatic pressure. The finite triangle potential well approximation is introduced considering the band bending near the interface. The asymptotic transfer method is adopted to obtain the sub-band energies and wave functions of the electrons and light holes. The pressure influence on the band offsets, the effective masses and the dielectric constant are considered in the calculation. The obvious pressure-induced increase of the exciton binding energy is demonstrated and the influences of the pressure-depended parameters on the binding energy are compared.

Keywords:

PACS: 71.35.-y, 73.20.-r, 73.40.Lq, 62.50.+p

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